LX5506M p roduction d ata s heet c c o o n n f f i i d d e e n n t t i i a a l l microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier copyright ? 2005 rev. 1.0c, 2009-08-20 tm ? description the LX5506M is a power amplifier optimized for the fcc unlicensed national information infrastructure (u-nii) band, hyperlan2 and japan wlan applications in the 4.9-5.9 ghz frequency range. the pa is implemented as a three-stage monolithic microwave integrated circuit (mmic) with active bias, on- chip input matching and output pre- matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates with a single positive voltage supply of 3.3v (nominal), with up to +22dbm linear output power for 802.11a ofdm spectrum mask compliance, and low evm of -30db for up to +18dbm output power in the 4.9-5.9ghz band. LX5506M features high gain of up to 30db with low quiescent current of 90ma, and high power added efficiency of up to 20% at maximum linear output power for ofdm mask compliance. it also features an on-chip output power detector to help reduce bom cost and board space in system implementation. the on-chip detector allows simple interface with an external directional coupler, providing accurate output power level readings insensitive to frequency, temperature, and load vswr. LX5506M is available in a 16-pin 3mmx3mm micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of the mlp package makes LX5506M an ideal solution for broadband, high-gain power amplifier requirements for ieee 802.11a, and hiperlan2 portable wlan applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? broadband 4.9-5.9ghz operation ? advanced ingap hbt ? single-polarity 3.3v supply ? power gain ~ 30db at 5.25ghz ? power gain > ~28db across 4.9-5.9ghz ? evm ~ -30db at pout=+17dbm at 5.25ghz ? evm ~ -30db at pout=+18dbm at 5.85ghz ? total current ~140ma for pout= +17dbm at 5.25ghz (for high duty cycle of 90%) ? maximum linear power ~ +22dbm for ofdm mask compliance ? maximum linear efficiency ~ 20% ? on-chip output power detector with improved frequency and load-vswr insensitivity ? on-chip input match ? on-chip rf decoupling ? simple output match for optimal broadband evm ? small footprint: 3x3mm 2 ? low profile: 0.9mm applications ? fcc u-nii wireless ? ieee 802.11a ? hiperlan2 ? 5ghz cordless phone product highlight msc 5552 818a msc 506m 451a l l x x 5 5 5 5 0 0 6 6 m m package order info lq plastic mlpq 16 pin rohs compliant / pb-free LX5506Mlq note: available in tape & reel. append the letters ?tr? to the part number. (i.e. LX5506Mlq-tr)
microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 tm ? www. microsemi . com copyright information thank you for your interest in microsemi ? analog mixed signal products. the full data sheet for this device contains proprietary information. to obtain a copy, please contact your loca l microsemi sales representative. the name of your local representative ca n be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or contact us directly by sending an email to: ipgdatasheets@microsemi.com be sure to specify the data sheet you are requesting and include your company name and contact inform ation and or vcard. we look forward to hearing from you.
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